ss4913 cmos omnipolar high sensitivity micropower hall switch 1 v2.00 mayr 1, 2012 features ? micropower consumption for ba ttery powered applications ? omnipolar, output switches with absolute value of north or south pole from magnet ? operation down to 2.5v ? high sensitivity for direct reed switch replacement applications 3 pin sot23 (suffix so) general description: the ss4913 omnipolar hall effect sensor ic is fabricated from mixed signal cmos technology .it incorporates advanced chopper-stabilization t echniques to provide accurate and stable magnetic switch points. the circuit design provides an internally controlled clocking mechanism to cycle power to the hall element and analog signal processing circuits. this serves to place the high current-consuming portions of the circuit into a ?sleep? mode. periodically the device is ?awake ned? by this internal logic and the magnetic flux from the hall element is evaluated against the predefined thresholds . if the flux density is above or below the bop/brp thresholds then the output transistor is driven to change states accordingly. while in the ?sleep? cycle the output transistor is latched in its previous state. the design has been optimized for service in applications requiring extended operating lifetime in battery powered systems. the output transistor of the ss4913 will be latched on (bop) in the presence of a sufficiently strong south or north magnetic field facing the marked side of the package. the output will be latched off (brp) in the absence of a magnetic field. applications ? solid state switch ? handheld wireless handset awake switch ? lid close sensor for battery powered devices ? magnet proximity sensor for reed switch replacement in low duty cycle applications
ss4913 cmos omnipolar high sensitivity micropower hall switch 2 v2.00 mayr 1, 2012 typical application circuit tsot-23 top view sec's pole-independent sensing t echnique allows for operation with either a north pole or south pole magnet orientation, enhancing the manufacturabi lity of the device. the state-of-the-art technology pr ovides the same output polarity for either pole face. it is strongly recommended that an external bypass capacitor be connected (in close proximity to the hall sensor) between the supply and ground of the device to reduce both external noise and noise generated by the c hopper-stabilizatio n technique. this is especially true due to the relatively high impedance of battery supplies. functional block diagram
ss4913 cmos omnipolar high sensitivity micropower hall switch 3 v2.00 mayr 1, 2012 pin definitions and descri p tions internal timing circuit sot pin name type function 1 v dd s upp l y s upp l y v o l t a g e p i n 2 o ut o u t pu t open dr a i n output p i n 3 gnd g r ound ground p i n current perio d i aw sample & output latched i av i sp awa ke taw:1 75 s sleep tsl:70ms 0 time
ss4913 cmos omnipolar high sensitivity micropower hall switch 4 v2.00 mayr 1, 2012 absolute maximum ratings parameter symbol value units supply voltage(operating) v dd 6 v supply current i dd 5 ma output voltage v out 6 v output curent i out 5 ma operating temperature range t a -40 to 85 c storage temperature rang t s -50 to 150 c esd sensitivity - 4000 v exceeding the absolute maximum ratings may cause permanent damage. exposure to absolute -maximum rated conditions for extended periods may affect device reliability. dc electrical characteristics dc operating parameters: t a = 25 , v dd =2.75v. parameter symbol test conditions min typ max units operating voltage v dd operating 2.5 3 5.5 v supply current i dd average 5 a output current i out 1.0 ma saturation voltage v sat i out =1ma 0.4 v awake mode time t aw operating 175 s sleep mode time t sl operating 70 ms magnetic characteristics output voltage(v) 3.0 off 2.5 2.0 b opn b rps b ops 1.5 b rpn 1.0 0.5 o n 0 - 80 - 60 - 40 -20 0 20 40 60 80 magnetic flux(gauss)
ss4913 cmos omnipolar high sensitivity micropower hall switch 5 v2.00 mayr 1, 2012 operating parameters: t a = 25, v dd =2.75v dc . parameter symbol min type max units operating point bop - +/-35 +/-60 gs release point brp +/-5 +/-21 - gs hysteresis bhys - 14 - gs esd protection human body model (hbm) tests according to: mil. std. 883f method 3015.7 limit values parameter symbol min max unit notes esd voltage v esd ? 4 kv
ss4913 cmos omnipolar high sensitivity micropower hall switch 6 v2.00 mayr 1, 2012 performance characteristics
ss4913 cmos omnipolar high sensitivity micropower hall switch 7 v2.00 mayr 1, 2012 unique features cmos hall ic technology the chopper stabilized amplifier uses switc hed capacitor techniques to eliminate the amplifier offset voltage, which, in bipola r devices, is a major source of temperature sensitive drift. cmos makes this advanced technique possible. the cmos chip is also much smaller than a bipolar chip, allowing ve ry sophisticated circuitry to be placed in less space. the small chip size also contributes to lower physical st ress and less power consumption. installation comments consider temperature coefficients of hall ic and magnetic, as well as air gap and life time variations. observe temperature lim its during wave soldering. typical ir solder-reflow profile: ? no rapid heating and cooling. ? recommended preheating for max. 2minutes at 150 ?c ? recommended reflowing fo r max. 5seconds at 240 ?c esd precautions electronic semiconductor products are sensitive to electro static discharge (esd). al ways observe electro static discharge control procedures whenever ha ndling semiconductor products.
ss4913 cmos omnipolar high sensitivity micropower hall switch 8 v2.00 mayr 1, 2012 package information package tsot-23: tsot-23 package hall location ordering information part no. pb-free temperature code package code packing ss4913esot yes -40c to 85c sot-23 7-in. reel, 3000 pieces/reel SS4913KSOT yes -40c to 125c sot-23 7-in. reel, 3000 pieces/reel ss4913lsot yes -40c to 150c sot-23 7-in. reel, 3000 pieces/reel
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